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IRLZ34SPBF

Part No IRLZ34SPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 30A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 35nC @ 5V
Max Input Capacitance 1600pF @ 25V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 3.7W (Ta), 88W (Tc)
Maximum Rds On at Id,Vgs 50 mOhm @ 18A, 5V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263 (D2Pak)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1047705-IRLZ34SPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRLZ34SPBF CAD Model

Description

The IRLZ34SPBF is a power MOSFET from Vishay, designed for use in a wide variety of applications, including power management, motor control, and switching circuits. This MOSFET offers excellent performance characteristics, including low on-resistance and fast switching speeds, making it ideal for efficient power conversion.

Applications

  • DC-DC converters
  • Motor control
  • Power management
  • Switching regulators
  • Load switches

Features

  • Logic-level gate drive
  • Low on-resistance (RDS(on))
  • Fast switching speed
  • Avalanche rated
  • Lead-free and RoHS compliant

Benefits

  • Can be directly driven by logic-level signals, simplifying circuit design.
  • Reduces power loss and improves efficiency due to low on-resistance.
  • Enables high-frequency operation in switching applications.
  • Provides robustness against transient voltage spikes.
  • Complies with environmental standards, making it suitable for green designs.

Specifications

The IRLZ34SPBF has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. It features a continuous drain current (ID) of 30A. The on-resistance (RDS(on)) is typically 0.035 Ω at VGS = 5V. The total gate charge (Qg) is typically 13 nC. It is packaged in a TO-263 (D2PAK) package and is designed for surface mount applications.

The IRLZ34SPBF is designed to minimize power dissipation and maximize efficiency in power conversion applications. The low on-resistance significantly reduces conduction losses, while the fast switching speed minimizes switching losses. The logic-level gate drive allows for direct interfacing with microcontrollers and other logic devices, simplifying circuit design. The avalanche rating ensures robustness against transient voltage spikes, increasing the overall reliability of the device. The IRLZ34SPBF is a versatile and reliable MOSFET suitable for a wide range of power electronics applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.6001 $64.0040
90+ $1.3130 $118.1700
140+ $1.2720 $178.0800
190+ $1.2309 $233.8710
245+ $1.1899 $291.5255
325+ $1.0668 $346.7100
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,400 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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