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Same model may have multiple batches, images only for reference.
SI1023CX-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI1023CX-T1-GE3

Part No SI1023CX-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V SC89-6
Datasheet
SI1023CX-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Maximum Rds On at Id,Vgs 756 mOhm @ 350mA, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 2.5nC @ 4.5V
Max Input Capacitance 45pF @ 10V
Maximum Power Dissipation 220mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-89-6
Win Source Part Number 1095664-SI1023CX-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI1023CX-T1-GE3 CAD Model

Description

The SI1023CX-T1-GE3 is a dual P-channel FET with a logic level gate manufactured by Vishay.

  • Channel Type: P-Channel
  • Drain-Source Breakdown Voltage: 20V
  • Maximum Power Dissipation: 220mW
  • Maximum Gate Charge: 2.5nC @ 4.5V
  • Maximum Input Capacitance: 45pF @ 10V
  • Mounting Type: Surface-Mount Technology (SMT)
  • Package: SC-89-6
  • Maximum On-Resistance: 756 milliohms @ 350mA
  • Gate-Source Threshold Voltage: 1V @ 250 microamperes

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Pricing & Ordering

Quantity Unit Price Ext. Price
340+ $0.1709 $58.1060
825+ $0.1404 $115.8300
1,275+ $0.1360 $173.4000
1,760+ $0.1316 $231.6160
2,275+ $0.1272 $289.3800
3,040+ $0.1140 $346.5600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,300 pieces
MOQ: 340 pcs
Order Increment : 1 pcs
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