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Same model may have multiple batches, images only for reference.
SI1026X-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI1026X-T1-E3

Part No SI1026X-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 60V 0.305A SOT563F
Datasheet
SI1026X-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 305mA
Maximum Rds On at Id,Vgs 1.4 Ohm @ 500mA, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 0.6nC @ 4.5V
Max Input Capacitance 30pF @ 25V
Maximum Power Dissipation 250mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-89-6
Win Source Part Number 100891-SI1026X-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI1026X-T1-E3 CAD Model

Description

The Vishay 100891-SI1026X-T1-E3 is a 2 N-Channel (Dual) FET that features a Logic Level Gate.

  • Type: Discrete Semiconductor Product
  • Package: SC-89-6
  • Mounting: SMD (SMT) technology
  • Maximum Power Dissipation: 250mW
  • Drain-Source Breakdown Voltage: 60V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Continuous Drain Current: 305mA @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 0.6nC @ 4.5V
  • Maximum Input Capacitance: 30pF @ 25V
  • Maximum Rds On: 1.4 Ohm @ 500mA, 10V
  • Popularity: High
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $8.7314 $52.3884
14+ $7.1642 $100.2988
22+ $6.9403 $152.6866
30+ $6.7165 $201.4950
39+ $6.4926 $253.2114
52+ $5.8209 $302.6868
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