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SI1039X-T1-E3

Part No SI1039X-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 0.87A SOT563F
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 870mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 450mV @ 250μA (Min)
Max Gate Charge 6nC @ 4.5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 170mW (Ta)
Maximum Rds On at Id,Vgs 165 mOhm @ 870mA, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-89-6
Dimension SOT-563, SOT-666
Win Source Part Number 102867-SI1039X-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI1039X-T1-E3 CAD Model

Description

The Vishay SI1039X-T1-E3 is a P-Channel MOSFET with a drain-source breakdown voltage of 12V and a maximum gate-source voltage of ±8V.

  • Manufacturer: Vishay
  • Product Name: SI1039X-T1-E3
  • Channel Type: P-Channel
  • Drain-Source Breakdown Voltage: 12V
  • Maximum Gate-Source Voltage: ±8V
  • Maximum Rds On @ Id,Vgs: 165 mOhm @ 870mA, 4.5V
  • Gate-Source Threshold Voltage: 450mV @ 250μA (Min)
  • Maximum Gate Charge: 6nC @ 4.5V
  • Maximum Input Capacitance: -
  • Continuous Drain Current @ 25°C: 870mA (Ta)
  • Power Dissipation (max): 170mW (Ta)
  • Temperature Rating: -55°C to 150°C (TJ)
  • Supply and Demand Status: balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4661 $58.2625
305+ $0.3825 $116.6625
470+ $0.3705 $174.1350
645+ $0.3585 $231.2325
835+ $0.3467 $289.4945
1,120+ $0.3107 $347.9840
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,000 pieces
MOQ: 125 pcs
Order Increment : 1 pcs
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