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Same model may have multiple batches, images only for reference.
SI1051X-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI1051X-T1-GE3

Part No SI1051X-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 8V 1.2A SC89-6
Datasheet
SI1051X-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 8V
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 9.45nC @ 5V
Max Input Capacitance 560pF @ 4V
Maximum Gate-Source Voltage ±5V
Power Dissipation (Max) 236mW (Ta)
Maximum Rds On at Id,Vgs 122 mOhm @ 1.2A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-89-6
Dimension SOT-563, SOT-666
Win Source Part Number 109256-SI1051X-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI1051X-T1-GE3 CAD Model

Description

The Vishay SI1051X-T1-GE3 is a P-channel MOSFET with a maximum power dissipation of 236mW.

  • Manufacturer: Vishay
  • Product Name: SI1051X-T1-GE3
  • Channel Type: P-channel
  • Maximum Power Dissipation: 236mW
  • Drain-Source Breakdown Voltage: 8V
  • Maximum Gate-Source Voltage: ±5V
  • Maximum Rds On: 122 mOhm @ 1.2A and 4.5V
  • Status: obsolete (EOL)
  • Popularity: medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
445+ $0.1305 $58.0725
1,080+ $0.1074 $115.9920
1,670+ $0.1040 $173.6800
2,300+ $0.1005 $231.1500
2,945+ $0.0982 $289.1990
3,950+ $0.0878 $346.8100
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 445 pcs
Order Increment : 1 pcs
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