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SI1071X-T1-GE3

Part No SI1071X-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 0.96A SC89-6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Gate-Source Threshold Voltage 1.45V @ 250μA
Max Gate Charge 13.3nC @ 10V
Max Input Capacitance 315pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 236mW (Ta)
Maximum Rds On at Id,Vgs 167 mOhm @ 960mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-89-6
Dimension SOT-563, SOT-666
Win Source Part Number 1095674-SI1071X-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian SI1071X-T1-GE3 CAD Model

Description

The Vishay 1095674-SI1071X-T1-GE3 is a P-Channel MOSFET with a maximum power dissipation of 236mW (Ta) and 30V drain-source breakdown voltage.

  • Manufacturer: Vishay
  • Maximum Power Dissipation: 236mW (Ta)
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Rds On @ Id,Vgs: 167 mOhm @ 960mA, 10V
  • Gate-Source Threshold Voltage: 1.45V @ 250μA
  • Maximum Gate-Source Voltage: ±12V
  • Maximum Gate Charge: 13.3nC @ 10V
  • Package: SC-89-6
  • Dimensions: SOT-563 and SOT-666
  • Application: Discrete semiconductor products
  • Operating Temperature: -55°C to 150°C (TJ)
  • Status: Obsolete (EOL)
  • Packaging: Reel - TR
  • Quantity per Package: 3k pcs

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