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SI1304BDL-T1-E3

Part No SI1304BDL-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 0.9A SOT323-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 900mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.3V @ 250μA
Max Gate Charge 2.7nC @ 4.5V
Max Input Capacitance 100pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 340mW (Ta), 370mW (Tc)
Maximum Rds On at Id,Vgs 270 mOhm @ 900mA, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-3
Dimension SC-70, SOT-323
Win Source Part Number 124037-SI1304BDL-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI1304BDL-T1-E3 CAD Model

Description

The SI1304BDL-T1-E3 is an N-channel MOSFET manufactured by Vishay.

  • Supply and Demand: Limited
  • Power Dissipation: 340mW (Ta), 370mW (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Rds On @ Id, Vgs: 270 mOhm @ 900mA, 4.5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5650 $62.6000
90+ $1.2844 $115.5960
140+ $1.2439 $174.1460
195+ $1.2035 $234.6825
250+ $1.1631 $290.7750
335+ $1.0430 $349.4050
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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