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SI1305EDL-T1-E3

Part No SI1305EDL-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 8V 0.86A SOT323-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 8V
Continuous Drain Current at 25°C 860mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 450mV @ 250μA (Min)
Max Gate Charge 4nC @ 4.5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 290mW (Ta)
Maximum Rds On at Id,Vgs 280 mOhm @ 1A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-3
Dimension SC-70, SOT-323
Win Source Part Number 109420-SI1305EDL-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI1305EDL-T1-E3 CAD Model

Description

The SI1305EDL-T1-E3 is a P-Channel 20-V MOSFET from Vishay. This device is designed to offer low on-resistance and fast switching, making it ideal for load switching and small signal applications. It comes in a compact SOT-23 package for space-saving designs.

Applications

  • Load Switching
  • Portable Devices
  • DC-DC Converters
  • Battery Management Systems
  • Small Signal Amplification

Features

  • P-Channel MOSFET
  • Low On-Resistance: RDS(on) = 0.160 Ω at VGS = -4.5 V
  • Low Threshold Voltage: VGS(th) = -1 V (Typical)
  • Fast Switching Speed
  • Small Footprint: SOT-23 Package
  • Halogen-free According to IEC 61249-2-21 Definition

Benefits

  • High Efficiency: The low on-resistance minimizes power loss during switching, contributing to higher efficiency in power management applications.
  • Extended Battery Life: Low threshold voltage and low gate charge make it suitable for battery-powered devices, improving battery life.
  • Space-Saving: The SOT-23 package allows for compact design in portable devices and other space-constrained applications.
  • Simplified Design: The low threshold voltage simplifies the gate drive requirements, reducing component count and cost.
  • Environmentally Friendly: The halogen-free construction complies with environmental standards.

Technical Specifications

  • Polarity: P-Channel
  • Maximum Drain-Source Voltage (VDS): -20 V
  • Gate-Source Voltage (VGS): ±8 V
  • Continuous Drain Current (ID): -2.3 A
  • Pulsed Drain Current (IDM): -6 A
  • Total Power Dissipation (PD): 0.83 W
  • Operating Temperature: -55 °C to +150 °C
  • Package: SOT-23

The SI1305EDL-T1-E3 MOSFET from Vishay offers a combination of low on-resistance and fast switching in a compact SOT-23 package. This device is well-suited for load switching, portable devices, and other applications requiring efficient power management.

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Pricing & Ordering

Quantity Unit Price Ext. Price
285+ $0.2056 $58.5960
685+ $0.1688 $115.6280
1,065+ $0.1635 $174.1275
1,460+ $0.1582 $230.9720
1,890+ $0.1529 $288.9810
2,530+ $0.1371 $346.8630
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,260 pieces
MOQ: 285 pcs
Order Increment : 1 pcs
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