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SI1307EDL-T1-E3

Part No SI1307EDL-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 0.85A SOT323-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 850mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 450mV @ 250μA (Min)
Max Gate Charge 5nC @ 4.5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 290mW (Ta)
Maximum Rds On at Id,Vgs 290 mOhm @ 1A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-3
Dimension SC-70, SOT-323
Win Source Part Number 115045-SI1307EDL-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI1307EDL-T1-E3 CAD Model

Description

The Vishay SI1307EDL-T1-E3 is a P-Channel MOSFET designed for use in a wide variety of applications.

  • Power Dissipation: 290mW (Ta)
  • Applications: discrete semiconductor products
  • Drain-Source Breakdown Voltage: 12V
  • Maximum Gate-Source Voltage: ±8V
  • Maximum Rds On @ Id,Vgs: 290 mOhm @ 1A, 4.5V
  • Gate-Source Threshold Voltage: 450mV @ 250μA (Min)
  • Maximum Gate Charge: 5nC @ 4.5V
  • Package: SC-70-3 and SOT-323
  • Mounting: SMD (SMT)
  • Drive Voltage: 1.8V, 4.5V
  • Status: Obsolete(EOL)
  • Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand: Balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
525+ $0.0954 $50.0850
1,280+ $0.0783 $100.2240
1,980+ $0.0759 $150.2820
2,725+ $0.0734 $200.0150
3,525+ $0.0710 $250.2750
4,720+ $0.0636 $300.1920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 525 pcs
Order Increment : 1 pcs
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