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SI1403BDL-T1-E3

Part No SI1403BDL-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 1.4A SC70-6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.3V @ 250μA
Max Gate Charge 4.5nC @ 4.5V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 568mW (Ta)
Maximum Rds On at Id,Vgs 150 mOhm @ 1.5A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6 (SOT-363)
Dimension 6-TSSOP, SC-88, SOT-363
Win Source Part Number 028345-SI1403BDL-T1-E3
Popularity Medium
Supply and Demand Status Balance
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian SI1403BDL-T1-E3 CAD Model

Description

The Vishay 328008 is a P-Channel MOSFET that has a power dissipation (Max) of 568mW (Ta).

  • Power Dissipation (Max): 568mW (Ta)
  • Operating Temperature: -55°C to 150°C (TJ)
  • Package: SC-70-6 (SOT-363)
  • Dimension: 6-TSSOP, SC-88, SOT-363
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 1.4A (Ta)
  • Gate-Source Threshold Voltage: 1.3V @ 250μA
  • Maximum Gate Charge: 4.5nC @ 4.5V
  • Maximum Rds On @ Id,Vgs: 150 mOhm @ 1.5A, 4.5V
  • Supplied: Reel with 3,000 pieces
  • Applications: various electronic applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
970+ $0.0598 $58.0060
2,355+ $0.0491 $115.6305
3,650+ $0.0475 $173.3750
5,030+ $0.0460 $231.3800
6,495+ $0.0445 $289.0275
8,700+ $0.0399 $347.1300
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,150 pieces
MOQ: 970 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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