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Same model may have multiple batches, images only for reference.
SI1405BDH-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI1405BDH-T1-GE3

Part No SI1405BDH-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 8V 1.6A SC-70-6 / Trans MOSFET P-CH 8V 1.6A 6-Pin SC-70 T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Series TrenchFET
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type P
Technology MOSFET
Drain Source Voltage 8V
Current - Continuous Drain (Id) @ 25°C 1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Vgs(th) (Maximum) @ Id 950mV @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 5.5nC @ 4.5V
Input Capacitance (Ciss) (Maximum) @ Vds 305pF @ 4V
Vgs (Maximum) ±8V
Power Dissipation (Maximum) 1.47W (Ta), 2.27W (Tc)
Rds On (Maximum) @ Id, Vgs 112 mOhm @ 2.8A, 4.5V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package SC-70-6 (SOT-363)
Package 6-TSSOP, SC-88, SOT-363
Win Source Part Number 794204-SI1405BDH-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Family Name Si1405BDH
Introduction Date September 17, 2007
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian SI1405BDH-T1-GE3 CAD Model

Description

The Vishay Siliconix from Vishay Siliconix electronic component is a MOSFET technology-based product with a Si1405BDH family name.

  • Package: 6-TSSOP, SC-88, SOT-363
  • Mounting: SMD
  • Obsolete: Yes
  • EOL: Yes
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Type: P channel
  • Drain Source Voltage: 8V
  • Vgs(th) (Maximum) @ Id: 950mV @ 250μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 5.5nC @ 4.5V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 305pF @ 4V
  • Maximum Vgs: ±8V
  • Power Dissipation (Maximum): 1.47W (Ta), 2.27W (Tc)
  • Rds On (Maximum) @ Id, Vgs: 112 mOhm @ 2.8A, 4.5V
  • EOL Date: Obsolete/end of life (estimated)

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