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SI1411DH-T1-E3

Part No SI1411DH-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 150V 420MA SC70-6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay
Series TrenchFET®
Package Tape & Reel
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 420mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 6.3 nC @ 10 V
Vgs (Max) ±20V
Power Dissipation (Max) 1W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SC-70-6
Package / Case 6-TSSOP, SC-88, SOT-363
Base Product Number SI1411
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 666083-SI1411DH-T1-E3
Ultra Librarian 3D Model Ultra Librarian SI1411DH-T1-E3 CAD Model

Description

The SI1411DH-T1-E3 is a P-channel MOSFET transistor from Vishay's TrenchFET series.

  • Designed for use in discrete semiconductor products
  • Specifically in single FETs and MOSFETs
  • Drain to source voltage (Vdss): 150V
  • Continuous drain current (Id): 420mA @ 25°C
  • Maximum on-resistance (Rds On): 2.6Ohm @ a drain current (Id) of 500mA and gate-source voltage (Vgs) of 10V
  • Housed in a 6-TSSOP, SC-88, SOT-363 package
  • Gate charge (Qg): 6.3nC @ 10V
  • Operates in a temperature range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.6001 $64.0040
90+ $1.3130 $118.1700
140+ $1.2720 $178.0800
190+ $1.2309 $233.8710
245+ $1.1899 $291.5255
325+ $1.0668 $346.7100
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,000 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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