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Same model may have multiple batches, images only for reference.
SI1413DH-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI1413DH-T1-E3

Part No SI1413DH-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 2.3A SC-70-6
Datasheet
SI1413DH-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 800mV @ 100μA
Max Gate Charge 8.5nC @ 4.5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 115 mOhm @ 2.9A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6 (SOT-363)
Dimension 6-TSSOP, SC-88, SOT-363
Win Source Part Number 099445-SI1413DH-T1-E3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI1413DH-T1-E3 CAD Model

Description

The Vishay 099445-SI1413DH-T1-E3 is a MOSFET type electronic component that is widely used in various industries.

  • Mounting: SMD (SMT)
  • Polarity: P-Channel
  • Category: Discrete Semiconductor Products
  • Status: obsolete (EOL)
  • Temperature Range: -55°C to 150°C (TJ)
  • Case/Package: SC-70-6 (SOT-363)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 2.3A (Ta)
  • Max Gate Charge: 8.5nC @ 4.5V
  • Maximum Rds On @ Id,Vgs: 115 mOhm @ 2.9A, 4.5V
  • Supply and Demand Status: sufficient

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