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Same model may have multiple batches, images only for reference.
SI1419DH-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI1419DH-T1-E3

Part No SI1419DH-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 200V 300MA SC70-6
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay
Series TrenchFET®
Package Tape & Reel
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 400mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 6.2 nC @ 10 V
Vgs (Max) ±20V
Power Dissipation (Max) 1W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SC-70-6
Package / Case 6-TSSOP, SC-88, SOT-363
Base Product Number SI1419
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 666086-SI1419DH-T1-E3
Ultra Librarian 3D Model Ultra Librarian SI1419DH-T1-E3 CAD Model

Description

The SI1419DH-T1-E3 is a P-Channel MOSFET transistor from Vishay's TrenchFET series by Vishay.

  • Series: TrenchFET
  • Drain to Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id) @ 25°C: 300mA
  • Rds On (Max) @ 400mA and 10V: 5Ohm
  • Mounting Type: Surface Mount
  • Package: 6-TSSOP, SC-88, SOT-363
  • Gate Charge (Qg) @ 10V: 6.2nC
  • Temperature Range: -55°C to 150°C
  • Status: Obsolete

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