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Same model may have multiple batches, images only for reference.
SI1424EDH-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI1424EDH-T1-GE3

Part No SI1424EDH-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 4A SOT-363
Datasheet
SI1424EDH-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 18nC @ 8V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.56W (Ta), 2.8W (Tc)
Maximum Rds On at Id,Vgs 33 mOhm @ 5A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-363
Dimension 6-TSSOP, SC-88, SOT-363
Win Source Part Number 1095690-SI1424EDH-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI1424EDH-T1-GE3 CAD Model

Description

The Vishay 437218 is a MOSFET technology, N-Channel, discrete semiconductor product.

  • Mounting: SMD (SMT)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 4A (Tc)
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 18nC @ 8V
  • Category: Discrete Semiconductor Products
  • Status: Active
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: SOT-363
  • Dimension: 6-TSSOP, SC-88, SOT-363
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
250+ $0.2025 $50.6250
605+ $0.1662 $100.5510
935+ $0.1610 $150.5350
1,285+ $0.1558 $200.2030
1,665+ $0.1506 $250.7490
2,225+ $0.1350 $300.3750
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,123 pieces
MOQ: 250 pcs
Order Increment : 1 pcs
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