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Same model may have multiple batches, images only for reference.
SI1450DH-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI1450DH-T1-GE3

Part No SI1450DH-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SI1450DH-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 8 V
Current - Continuous Drain (Id) @ 25°C 4.53A (Ta), 6.04A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 47mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.05 nC @ 5 V
Vgs (Max) ±5V
Input Capacitance (Ciss) (Max) @ Vds 535 pF @ 4 V
Power Dissipation (Max) 1.56W (Ta), 2.78W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package SC-70-6
Package / Case 6-TSSOP, SC-88, SOT-363
Base Product Number SI1450
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277507-SI1450DH-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI1450DH-T1-GE3 CAD Model

Description

The SI1450DH-T1-GE3 is a transistor - FET, MOSFET - single manufactured by Vishay Siliconix.

  • FET Type: N-channel MOSFET
  • Drain to Source Voltage (Vdss): 8 V
  • Current - Continuous Drain (Id) @ 25°C: 4.53A (Ta), 6.04A (Tc)
  • Package: Tape & Reel (TR)
  • Supply and Demand Status: Obsolete
  • Temperature Range - Operating: -55°C ~ 150°C (TJ)

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