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Same model may have multiple batches, images only for reference.
SI1469DH-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI1469DH-T1-E3

Part No SI1469DH-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 2.7A SC70-6
Datasheet
SI1469DH-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 8.5nC @ 4.5V
Max Input Capacitance 470pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.5W (Ta), 2.78W (Tc)
Maximum Rds On at Id,Vgs 80 mOhm @ 2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6 (SOT-363)
Dimension 6-TSSOP, SC-88, SOT-363
Win Source Part Number 1095696-SI1469DH-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI1469DH-T1-E3 CAD Model

Description

The Vishay P-channel MOSFET is an active component that is used to switch and amplify electronic signals. Vishay P-channel MOSFET

  • Maximum Power Dissipation: 1.5W (Ta) and 2.78W (Tc)
  • Packaging: reel-TR
  • Mounting Type: surface-mounted
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 2.7A (Tc)
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Maximum Gate Charge @ 4.5V: 8.5nC
  • Maximum Input Capacitance @ 10V: 470pF
  • Category: Discrete Semiconductor Products
  • Product Status: active

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1814 $53.1630
105+ $0.9694 $101.7870
160+ $0.9391 $150.2560
225+ $0.9088 $204.4800
285+ $0.8785 $250.3725
385+ $0.7876 $303.2260
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Availability: 5,500 pieces
MOQ: 45 pcs
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