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Same model may have multiple batches, images only for reference.
SI1539DDL-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI1539DDL-T1-GE3

Part No SI1539DDL-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SI1539DDL-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N and P-Channel
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 700mA (Tc), 460mA (Tc)
Rds On (Max) @ Id, Vgs 388mOhm @ 600mA, 10V, 1.07Ohm @ 400mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA, 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.1nC @ 4.5V, 1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 28pF @ 15V, 21pF @ 15V
Power - Max 340mW
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-70-6
Base Product Number SI1539
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1278452-SI1539DDL-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI1539DDL-T1-GE3 CAD Model

Description

The Vishay Siliconix MOSFET Arrays are discrete semiconductor products that are designed for a wide range of applications.

  • FET Type: N and P-channel
  • FET Feature: Standard
  • Maximum Power: 340mW
  • Maximum Gate Charge: 1.2nC

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