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Same model may have multiple batches, images only for reference.
TK17E80W,S1X Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK17E80W,S1X

Part No TK17E80W,S1X
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 17A TO220-3
Datasheet
TK17E80W,S1X Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Series DTMOSIV
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 800V
Current - Continuous Drain (Id) @ 25°C 17A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 850μA
Gate Charge (Qg) (Maximum) @ Vgs 32nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2050pF @ 300V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 180W (Tc)
Rds On (Maximum) @ Id, Vgs 290 mOhm @ 8.5A, 10V
Operating Temperature Range 150°C
Mounting Style Through Hole
Manufacturer Package TO-220
Package TO-220-3
Win Source Part Number 796830-TK17E80W,S1X
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TK17E80W,S1X CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET is a powerful and efficient electronic component.

  • Maximum drain-source voltage: 800V
  • Current rating: 17A @ 25°C
  • Package: TO-220-3
  • Maximum power dissipation: 180W
  • Maximum Rds On: 290 mOhm @ 8.5A, 10V
  • Input capacitance: 2050pF @ 300V
  • Gate charge: 32nC @ 10V
  • Vgs(th): 4V @ 850μA
  • Maximum gate-source voltage: ±20V
  • Series: DTMOSIV

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