SI1539DL-T1-GE3

Part No SI1539DL-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V SC70-6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 540mA, 420mA
Maximum Rds On at Id,Vgs 480 mOhm @ 590mA, 10V
Gate-Source Threshold Voltage 2.6V @ 250μA
Max Gate Charge 1.4nC @ 10V
Maximum Power Dissipation 270mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6 (SOT-363)
Win Source Part Number 100847-SI1539DL-T1-GE3
Popularity Medium
Supply and Demand Status Limited

Description

The Vishay SI1539DL-T1-GE3 is a SMD N and P-channel FET designed for use in discrete semiconductor products. The device is packaged in a reel - TR, and has an obsolete (EOL) status. The FET is designed for use in various electronic applications, and features a logic level gate. The device is capable of operating in a temperature range of -55°C to 150°C (TJ), and has a maximum power dissipation of 270mW. The drain-source breakdown voltage is 30V, and the maximum Rds On at Id,Vgs is 480 mOhm @ 590mA, 10V. The Vishay SI1539DL-T1-GE3 FET is a reliable and efficient component for use in various electronic systems.

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