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Same model may have multiple batches, images only for reference.
SI1557DH-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI1557DH-T1-E3

Part No SI1557DH-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 12V 1.2A SC70-6
Datasheet
SI1557DH-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 1.2A, 770mA
Maximum Rds On at Id,Vgs 235 mOhm @ 1.2A, 4.5V
Gate-Source Threshold Voltage 1V @ 100μA
Max Gate Charge 1.2nC @ 4.5V
Maximum Power Dissipation 470mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6 (SOT-363)
Win Source Part Number 094678-SI1557DH-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI1557DH-T1-E3 CAD Model

Description

The Vishay SI1557DH-T1-E3 is a logic level gate N and P-channel FET that belongs to the Discrete Semiconductor Products category.

  • Maximum Power Dissipation: 470mW
  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current @ 25°C: 1.2A and 770mA
  • Gate-Source Threshold Voltage: 1V @ 100μA
  • Max Gate Charge: 1.2nC @ 4.5V
  • Maximum Rds On @ Id,Vgs: 235 mOhm @ 1.2A and 4.5V
  • Status: obsolete (EOL)
  • Popularity: high
  • Fake Probability: 35%
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
290+ $0.1998 $57.9420
705+ $0.1640 $115.6200
1,090+ $0.1594 $173.7460
1,505+ $0.1536 $231.1680
1,940+ $0.1490 $289.0600
2,590+ $0.1340 $347.0600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 290 pcs
Order Increment : 1 pcs
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