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Same model may have multiple batches, images only for reference.
SI1905BDH-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI1905BDH-T1-E3

Part No SI1905BDH-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 8V 0.63A SC70-6
Datasheet
SI1905BDH-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 8V
Continuous Drain Current at 25°C 630mA
Maximum Rds On at Id,Vgs 542 mOhm @ 580mA, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 1.5nC @ 4.5V
Max Input Capacitance 62pF @ 4V
Maximum Power Dissipation 357mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6 (SOT-363)
Win Source Part Number 064387-SI1905BDH-T1-E3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI1905BDH-T1-E3 CAD Model

Description

The Vishay SI1905BDH-T1-E3 FET is a high-quality product that is designed for use in a wide range of applications.

  • Maximum Power Dissipation: 357mW
  • Feature: 2 P-Channel (Dual) FET
  • Market Popularity: Medium
  • Supply and Demand Status: Sufficient
  • Package: SC-70-6 (SOT-363)

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Pricing & Ordering

Quantity Unit Price Ext. Price
215+ $0.2712 $58.3080
520+ $0.2226 $115.7520
805+ $0.2157 $173.6385
1,110+ $0.2087 $231.6570
1,435+ $0.2017 $289.4395
1,920+ $0.1809 $347.3280
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,400 pieces
MOQ: 215 pcs
Order Increment : 1 pcs
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