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Same model may have multiple batches, images only for reference.
SI1913DH-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI1913DH-T1-E3

Part No SI1913DH-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 0.88A SC70-6
Datasheet
SI1913DH-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 880mA
Maximum Rds On at Id,Vgs 490 mOhm @ 880mA, 4.5V
Gate-Source Threshold Voltage 1V @ 100μA
Max Gate Charge 1.8nC @ 4.5V
Maximum Power Dissipation 570mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6 (SOT-363)
Win Source Part Number 1095711-SI1913DH-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI1913DH-T1-E3 CAD Model

Description

The Vishay SI1913DH-T1-E3 is a SMD (SMT) mounting type SC-70-6 (SOT-363) electronic component.

  • Category: Discrete Semiconductor Products
  • Lifecycle Status: Obsolete (EOL)
  • Power Dissipation: 570mW
  • Drain-Source Breakdown Voltage: 20V
  • Supply and Demand: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
250+ $0.2356 $58.9000
600+ $0.1940 $116.4000
930+ $0.1871 $174.0030
1,275+ $0.1813 $231.1575
1,645+ $0.1756 $288.8620
2,210+ $0.1571 $347.1910
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,242 pieces
MOQ: 250 pcs
Order Increment : 1 pcs
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