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SI1926DL-T1-E3

Part No SI1926DL-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Dual N-Channel 60-V (D-S) MOSFET
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Series TrenchFET
Packaging Reel - TR
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain Source Voltage 60V
Current - Continuous Drain (Id) @ 25°C 370mA
Rds On (Maximum) @ Id, Vgs 1.4 Ohm @ 340mA, 10V
Vgs(th) (Maximum) @ Id 2.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 1.4nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 18.5pF @ 30V
Power - Max 510mW
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Package 6-TSSOP, SC-88, SOT-363
Manufacturer Package SC-70-6 (SOT-363)
Win Source Part Number 1248794-SI1926DL-T1-E3
Manufacturer Homepage www.vishay.com
Family Name Si1926DL
Introduction Date October 28, 2007
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI1926DL-T1-E3 CAD Model

Description

The Si1926DL-T1-E3 is a part of the TrenchFET series of electronic components manufactured by Vishay.

  • Component Type: Dual N-channel FET with a logic level gate
  • Maximum Drain Source Voltage: 60V
  • Maximum Power: 510mW
  • Applications: Discrete semiconductor products
  • Supply and Demand: Limited
  • Estimated EOL Date: 2024

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0478 $52.3900
120+ $0.8598 $103.1760
185+ $0.8329 $154.0865
250+ $0.8060 $201.5000
325+ $0.7792 $253.2400
430+ $0.6986 $300.3980
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 28,000 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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