The Vishay Si1926DL-T1-GE3 is a dual N-channel MOSFET with a maximum power dissipation of 510mW.

• Power Dissipation (Max): 510mW
• Drain-Source Breakdown Voltage: 60V
• Continuous Drain Current @ 25°C: 370mA
• Gate-Source Threshold Voltage: 2.5V @ 250μA
• Maximum Gate Charge: 1.4nC @ 10V
• Maximum Input Capacitance: 18.5pF @ 30V
• Maximum Rds On @ Id,Vgs: 1.4 Ohm @ 340mA, 10V
• Package: SC-70-3 (SOT323)
• Mounting Technology: surface mount technology
• Operating Temperature Range: -55°C to 150°C
• Type: logic level gate MOSFET