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Same model may have multiple batches, images only for reference.
SI2302CDS-T1-BE3 Vishay
Same model may have multiple batches, images only for reference.

SI2302CDS-T1-BE3

Part No SI2302CDS-T1-BE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL 20-V (D-S) MOSFET / N-Channel 20 V 2.6A (Ta) 710mW (Ta) Surface Mount SOT-23-3 (TO-236)
Datasheet
SI2302CDS-T1-BE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay Siliconix
Series -
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 57mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id 850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.5 nC @ 4.5 V
Vgs (Max) ±8V
FET Feature -
Power Dissipation (Max) 710mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1376787-SI2302CDS-T1-BE3
Ultra Librarian 3D Model Ultra Librarian SI2302CDS-T1-BE3 CAD Model

Description

The SI2302CDS-T1-BE3 is an N-channel MOSFET transistor from Vishay Siliconix.

  • Package: TO-236-3, SC-59, SOT-23-3
  • Mounting Type: Surface Mount
  • Drain-to-Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 2.6A @ 25°C
  • On-Resistance: 57mOhm
  • Gate Threshold Voltage (Vgs(th)): 850mV
  • Gate Charge (Qg): 5.5nC @ 4.5V
  • Vgs (Max): ±8V
  • Power Dissipation: 710mW
  • Operating Temperature: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
225+ $0.2263 $50.9175
475+ $0.2120 $100.7000
735+ $0.2048 $150.5280
1,050+ $0.1905 $200.0250
1,365+ $0.1833 $250.2045
1,705+ $0.1762 $300.4210
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Availability: 8,680 pieces
MOQ: 225 pcs
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