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SI2303BDS-T1-E3 Real Image SI2303BDS-T1-E3 real image5380
Same model may have multiple batches, images only for reference.
SI2303BDS-T1-E3 Real Image SI2303BDS-T1-E3 real image5380
SI2303BDS-T1-E3 Real Image SI2303BDS-T1-E3 real image5380
Same model may have multiple batches, images only for reference.

SI2303BDS-T1-E3

Part No SI2303BDS-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 1.49A SOT23-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 1.49A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 10nC @ 10V
Max Input Capacitance 180pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 700mW (Ta)
Maximum Rds On at Id,Vgs 200 mOhm @ 1.7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 096289-SI2303BDS-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI2303BDS-T1-E3 CAD Model

Description

This electronic component is a MOSFET manufactured by Vishay.

  • Polarity: P-Channel
  • Power Dissipation (Max): 700mW (Ta)
  • Category: Discrete Semiconductor Products
  • Mounting: SMD (SMT)
  • Product Status: Obsolete (EOL)
  • Temperature Range: -55°C to 150°C (TJ)
  • Packaging: Reel - TR
  • Package: SOT-23-3 (TO-236)
  • Maximum Gate-Source Voltage: ±20V
  • Supply and Demand Status: Sufficient

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