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SI2304BDS-T1-E3

Part No SI2304BDS-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 2.6A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 4nC @ 5V
Max Input Capacitance 225pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 750mW (Ta)
Maximum Rds On at Id,Vgs 70 mOhm @ 2.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 028366-SI2304BDS-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian SI2304BDS-T1-E3 CAD Model

Description

The 028366-SI2304BDS-T1-E3 is an N-channel MOSFET with a maximum power dissipation of 750mW (Ta) manufactured by Vishay.

  • Popularity: High
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 2.6A (Ta)
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 4nC @ 5V
  • Maximum Rds On @ Id,Vgs: 70 mOhm @ 2.5A, 10V
  • Mounting: SMD (SMT) SOT-23-3 (TO-236)
  • Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.5778 $52.0020
215+ $0.4741 $101.9315
330+ $0.4593 $151.5690
450+ $0.4445 $200.0250
585+ $0.4297 $251.3745
780+ $0.3852 $300.4560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 187,920 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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