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SI2307BDS-T1-E3

Part No SI2307BDS-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 2.5A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 15nC @ 10V
Max Input Capacitance 380pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 750mW (Ta)
Maximum Rds On at Id,Vgs 78 mOhm @ 3.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 028373-SI2307BDS-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian SI2307BDS-T1-E3 CAD Model

Description

The Vishay SI2307BDS-T1-E3 is a high popularity electronic component that is widely used in industrial and power management applications.

  • Manufacturer's Homepage: www.vishay.com
  • Win Source Part Number: 028373-SI2307BDS-T1-E3
  • Type: P-channel MOSFET
  • Maximum Power Dissipation: 750mW (Ta)
  • Maximum Drain-Source Breakdown Voltage: 30V
  • Packaging: SOT-23-3 (TO-236)
  • Maximum Rds On @ Id,Vgs: 78 mOhm @ 3.2A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
210+ $0.2765 $58.0650
450+ $0.2587 $116.4150
695+ $0.2499 $173.6805
1,000+ $0.2319 $231.9000
1,295+ $0.2231 $288.9145
1,620+ $0.2141 $346.8420
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 13,480 pieces
MOQ: 210 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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