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Same model may have multiple batches, images only for reference.
SI2307CDS-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI2307CDS-T1-E3

Part No SI2307CDS-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 3.5A SOT23-3
Datasheet
SI2307CDS-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 6.2nC @ 4.5V
Max Input Capacitance 340pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.1W (Ta), 1.8W (Tc)
Maximum Rds On at Id,Vgs 88 mOhm @ 3.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 064392-SI2307CDS-T1-E3
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian SI2307CDS-T1-E3 CAD Model

Description

The Vishay 064392-SI2307CDS-T1-E3 is a P-Channel MOSFET designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 1.1W (Ta) and 1.8W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 3.5A (Tc)
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 88 mOhm @ 3.5A, 10V
  • Application: Industrial Power Management

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Pricing & Ordering

Quantity Unit Price Ext. Price
140+ $0.3586 $50.2040
300+ $0.3359 $100.7700
465+ $0.3246 $150.9390
665+ $0.3019 $200.7635
865+ $0.2905 $251.2825
1,075+ $0.2792 $300.1400
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Availability: 4,951 pieces
MOQ: 140 pcs
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