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Same model may have multiple batches, images only for reference.
SI2308BDS-T1-BE3 Vishay
Same model may have multiple batches, images only for reference.

SI2308BDS-T1-BE3

Part No SI2308BDS-T1-BE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL 60-V (D-S) MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay Siliconix
Series -
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 1.9A (Ta), 2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 156mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.8 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 190 pF @ 30 V
FET Feature -
Power Dissipation (Max) 1.09W (Ta), 1.66W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1376914-SI2308BDS-T1-BE3
Ultra Librarian 3D Model Ultra Librarian SI2308BDS-T1-BE3 CAD Model

Description

The SI2308BDS-T1-BE3 is a N-Channel MOSFET (Metal Oxide) transistor from Vishay Siliconix.

  • Package: TO-236-3, SC-59, SOT-23-3
  • Drain to Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 1.9A (Ta), 2.3A (Tc) @ 25°C
  • Maximum Gate Voltage (Vgs): ±20V
  • Gate Charge (Qg): 6.8nC @ 10V
  • On-Resistance (Rds On): 156mOhm @ 1.9A and 10V
  • Power Dissipation: 1.09W (Ta), 1.66W (Tc)
  • Temperature Range: -55°C to 150°C

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