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SI2308BDS-T1-E3

Part No SI2308BDS-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 60V 2.3A 3-Pin SOT-23 T/R / MOSFET N-CH 60V 2.3A SOT23-3
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 6.8nC @ 10V
Max Input Capacitance 190pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.09W (Ta), 1.66W (Tc)
Maximum Rds On at Id,Vgs 156 mOhm @ 1.9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 064393-SI2308BDS-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management
Family Name Si2308BDS
Introduction Date March 13, 2008
ECCN EAR99
Country of Origin China, Taiwan
Halogen Free Not Compliant
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian SI2308BDS-T1-E3 CAD Model

Description

The SI2308BDS-T1-E3 is a N-channel MOSFET from Vishay.

  • Application: Power Management
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current @ 25°C: 2.3A
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 6.8nC @ 10V
  • Maximum Rds On: 156 mOhm @ 1.9A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1642 $52.3890
105+ $0.9553 $100.3065
165+ $0.9254 $152.6910
225+ $0.8956 $201.5100
290+ $0.8657 $251.0530
390+ $0.7762 $302.7180
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 101,745 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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