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Same model may have multiple batches, images only for reference.
SI2311DS-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI2311DS-T1-E3

Part No SI2311DS-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 8V 3A SOT23
Datasheet
SI2311DS-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 8V
Continuous Drain Current at 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 800mV @ 250μA
Max Gate Charge 12nC @ 4.5V
Max Input Capacitance 970pF @ 4V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 710mW (Ta)
Maximum Rds On at Id,Vgs 45 mOhm @ 3.5A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 028376-SI2311DS-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI2311DS-T1-E3 CAD Model

Description

The Vishay SI2311DS-T1-E3 is a P-Channel MOSFET with a maximum power dissipation of 710mW (Ta).

  • Drain-Source Breakdown Voltage: 8V
  • Continuous Drain Current: 3A (Ta)
  • Maximum Rds On @ Id, Vgs: 45 mOhm @ 3.5A, 4.5V
  • Case: SOT-23-3
  • Popularity: High
  • Product Status: Obsolete (EOL)

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Pricing & Ordering

Quantity Unit Price Ext. Price
345+ $0.1686 $58.1670
835+ $0.1386 $115.7310
1,295+ $0.1340 $173.5300
1,790+ $0.1294 $231.6260
2,295+ $0.1259 $288.9405
3,095+ $0.1120 $346.6400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,844 pieces
MOQ: 345 pcs
Order Increment : 1 pcs
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