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Same model may have multiple batches, images only for reference.
SI2316DS-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI2316DS-T1-GE3

Part No SI2316DS-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 2.9A SOT23-3
Datasheet
SI2316DS-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 800mV @ 250μA (Min)
Max Gate Charge 7nC @ 10V
Max Input Capacitance 215pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 700mW (Ta)
Maximum Rds On at Id,Vgs 50 mOhm @ 3.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1095735-SI2316DS-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI2316DS-T1-GE3 CAD Model

Description

The Vishay 1095735-SI2316DS-T1-GE3 is a MOSFET electronic component with N-Channel polarity. Vishay

  • Mounting: SMD (SMT)
  • Package: Reel-TR
  • Supply and Demand: Sufficient
  • Temperature Range: -55°C to 150°C (TJ)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 2.9A (Ta)
  • Maximum Rds On @ Id,Vgs: 50 mOhm @ 3.4A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.5896 $50.1160
185+ $0.5523 $102.1755
285+ $0.5336 $152.0760
405+ $0.4963 $201.0015
525+ $0.4777 $250.7925
655+ $0.4590 $300.6450
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Availability: 5,470 pieces
MOQ: 85 pcs
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