The Vishay SI2318DS-T1-E3 is a N-channel MOSFET designed for use in discrete semiconductor products.

• Maximum Power Dissipation: 750mW (Ta)
• Drain-Source Breakdown Voltage: 40V
• Continuous Drain Current @ 25°C: 3A (Ta)
• Gate-Source Threshold Voltage: 3V @ 250μA
• Maximum Rds On @ Id,Vgs: 45 mOhm @ 3.9A, 10V
• Maximum Gate-Source Voltage: ±20V
• Maximum Gate Charge: 15nC @ 10V
• Input Capacitance: 540pF @ 20V
• Common-Used Part: Yes
• Application Field: Industrial, Motor Drive & Control Application
• Supply and Demand Status: Sufficient