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SI2321DS-T1-E3

Part No SI2321DS-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 2.9A SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 900mV @ 250μA
Max Gate Charge 13nC @ 4.5V
Max Input Capacitance 715pF @ 6V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 710mW (Ta)
Maximum Rds On at Id,Vgs 57 mOhm @ 3.3A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 064395-SI2321DS-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI2321DS-T1-E3 CAD Model

Description

The Vishay 064395-SI2321DS-T1-E3 is a MOSFET technology-based P-channel discrete semiconductor product with a maximum power dissipation of 710mW (Ta).

  • Manufacturer: Vishay
  • Mounting: Surface mountable
  • Category: Discrete semiconductor products
  • Supply and Demand Status: Balanced
  • Status: Obsolete (EOL)
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: reel-TR
  • Case/Package: SOT-23-3 (TO-236)
  • Dimension: TO-236-3, SC-59, SOT-23-3
  • Drain-Source Breakdown Voltage: 20V

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Pricing & Ordering

Quantity Unit Price Ext. Price
610+ $0.0947 $57.7670
1,495+ $0.0774 $115.7130
2,310+ $0.0751 $173.4810
3,175+ $0.0728 $231.1400
4,100+ $0.0705 $289.0500
5,455+ $0.0635 $346.3925
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,388 pieces
MOQ: 610 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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