The Si2323CDS-T1-GE3 is a P-channel MOSFET designed for use in discrete semiconductor products.

• Maximum Power Dissipation: 1.25W (Ta), 2.5W (Tc)
• Mounting: SOT-23-3 (TO-236) package
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Drain-Source Breakdown Voltage: 20V
• Continuous Drain Current: 6A (Tc) @ 25°C
• Gate-Source Threshold Voltage: 1V @ 250μA
• Maximum Gate Charge: 25nC @ 4.5V
• Maximum Input Capacitance: 1090pF @ 10V
• Maximum Rds On @ Id,Vgs: 39 mOhm @ 4.6A, 4.5V
• Family: Si2323CDS family
• Supply and Demand Status: Balanced