The SI2323DS-T1-GE3 is a P-channel MOSFET transistor from Vishay that is part of the Discrete Semiconductor Products category.

• Power Dissipation: 750mW (Ta) (Max)
• Drain-Source Breakdown Voltage: 20V
• Rds On @ Id,Vgs: 39 mOhm @ 4.7A, 4.5V (Max)
• Gate-Source Threshold Voltage: 1V @ 250μA
• Gate Charge: 19nC @ 4.5V (Max)
• Input Capacitance: 1020pF @ 10V (Max)
• Gate-Source Voltage: ±8V (Max)
• Drive Voltage: 1.8V, 4.5V (Max Rds On, Min Rds On)
• Package: SOT-23-3 (TO-236)
• Mounting: SMD (SMT)
• Temperature Range: -55°C to 150°C (TJ)
• Supply and Demand Status: Limited