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NTMFS6H818NLT1G

Part No NTMFS6H818NLT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 22A/135A 5DFN / N-Channel 80 V 22A (Ta), 135A (Tc) 3.8W (Ta), 140W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer onsemi
Packaging Reel - TR
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 22A, 135A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 190µA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3844 pF @ 40 V
Power Dissipation (Max) 3.8W, 140W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL)
Case / Package 8-PowerTDFN, 5 Leads
Base Product Number NTMFS6
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 488-NTMFS6H818NLT1GDKR,488-NTMFS6H818NLT1GTR,488-NTMFS6H818NLT1GCT
Standard Package 1,500
Win Source Part Number 1323925-NTMFS6H818NLT1G
Ultra Librarian 3D Model Ultra Librarian NTMFS6H818NLT1G CAD Model

Description

ON Semiconductor NTMFS6H818NLT1G N-Channel Power MOSFET

The NTMFS6H818NLT1G is a cutting-edge N-Channel Power MOSFET from ON Semiconductor, designed to deliver high efficiency and power density in a wide range of applications. This MOSFET is part of ON Semiconductor's portfolio of energy-efficient devices, providing designers with a reliable and robust component for their power management solutions.

Key Features

  • Voltage and Current: It operates at a drain-to-source voltage (VDS) of 80V, with a continuous drain current (ID) of 194A, making it suitable for high-performance applications.
  • Low RDS(on): The device boasts an ultra-low on-resistance (RDS(on)) of 1.35 mΩ at VGS = 10V, which enhances its efficiency by minimizing conduction losses.
  • Power Dissipation: With a power dissipation (PD) of 3.8W, the NTMFS6H818NLT1G can handle significant power, making it ideal for demanding environments.
  • Gate Charge: The device features a low total gate charge (QG) that ensures fast switching performance, which is crucial for reducing switching losses in power conversion systems.

Applications

The NTMFS6H818NLT1G is versatile and can be used in a variety of applications, including:

  • DC/DC Converters
  • Power Supplies for Servers
  • Motor Drives
  • Power Tools
  • Automotive Applications
  • Synchronous Rectification

Package and Reliability

This MOSFET comes in a compact 5x6 mm footprint, encapsulated in a RoHS-compliant, halogen-free, SO-8FL package, which provides excellent thermal performance and is suitable for space-constrained applications. ON Semiconductor's commitment to quality ensures that the NTMFS6H818NLT1G meets stringent reliability standards, providing a long operational life and consistent performance.

Environmental and Regulatory Compliance

The NTMFS6H818NLT1G is compliant with various environmental standards, including Pb-free and Halogen-free specifications. It adheres to ON Semiconductor's green policy, reflecting the company's dedication to environmental responsibility while providing high-performance power solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.1036 $60.6980
130+ $0.9055 $117.7150
200+ $0.8773 $175.4600
275+ $0.8489 $233.4475
355+ $0.8207 $291.3485
475+ $0.7357 $349.4575
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,310 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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