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Same model may have multiple batches, images only for reference.
SI2327DS-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI2327DS-T1-E3

Part No SI2327DS-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 200V 0.38A SOT23-3
Datasheet
SI2327DS-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 380mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 510pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 750mW (Ta)
Maximum Rds On at Id,Vgs 2.35 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1095742-SI2327DS-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI2327DS-T1-E3 CAD Model

Description

This electronic component is manufactured by Vishay. The Win Source Part Number for this product is 1095742-SI2327DS-T1-E3.

  • Polarity: P-Channel
  • Power Dissipation (Max): 750mW (Ta)
  • Mounting Type: SMD (SMT)
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 380mA (Ta) @ 25°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.7842 $62.4470
80+ $1.4640 $117.1200
125+ $1.4183 $177.2875
170+ $1.3725 $233.3250
220+ $1.3268 $291.8960
295+ $1.1896 $350.9320
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 35 pcs
Order Increment : 3000 pcs
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