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SI2338DS-T1-BE3

Part No SI2338DS-T1-BE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL 30-V (D-S) MOSFET / N-Channel 30 V 5.5A (Ta), 6A (Tc) 1.3W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay Siliconix
Series -
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 5.5A (Ta), 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 28mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 424 pF @ 15 V
FET Feature -
Power Dissipation (Max) 1.3W (Ta), 2.5W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1357301-SI2338DS-T1-BE3
Ultra Librarian 3D Model Ultra Librarian SI2338DS-T1-BE3 CAD Model

Description

The SI2338DS-T1-BE3 is a single N-Channel MOSFET designed for discrete semiconductor applications and is part of the Vishay Siliconix series.

  • Vdss: 30V
  • Id: 5.5A (Ta), 6A (Tc) @ 25°C
  • Rds On: 28mOhm @ 5.5A and 10V
  • Vgs(th): 2.5V @ 250μA
  • Qg: 13nC @ 10V
  • Package: Surface Mount, TO-236-3 (SC-59, SOT-23-3)

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Pricing & Ordering

Quantity Unit Price Ext. Price
140+ $0.3699 $51.7860
290+ $0.3465 $100.4850
450+ $0.3348 $150.6600
645+ $0.3114 $200.8530
835+ $0.2997 $250.2495
1,045+ $0.2880 $300.9600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 140 pcs
Order Increment : 1 pcs
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