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Same model may have multiple batches, images only for reference.
SI2342DS-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI2342DS-T1-GE3

Part No SI2342DS-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 8V 6A SOT-23
Datasheet
SI2342DS-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 8V
Continuous Drain Current at 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Gate-Source Threshold Voltage 800mV @ 250μA
Max Gate Charge 15.8nC @ 4.5V
Max Input Capacitance 1070pF @ 4V
Maximum Gate-Source Voltage ±5V
Power Dissipation (Max) 1.3W (Ta), 2.5W (Tc)
Maximum Rds On at Id,Vgs 17 mOhm @ 7.2A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1095752-SI2342DS-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI2342DS-T1-GE3 CAD Model

Description

The Vishay MOSFET is a N-Channel power transistor that is designed to provide high performance.

  • Maximum Power Dissipation: 1.3W (Ta) and 2.5W (Tc)
  • Drive Voltage: 1.2V (Max Rds On) and 4.5V (Min Rds On)
  • Drain-Source Breakdown Voltage: 8V
  • Maximum Rds On @ Id,Vgs: 17 mOhm @ 7.2A, 4.5V
  • Maximum Gate-Source Voltage: ±5V
  • Gate-Source Threshold Voltage: 800mV @ 250μA
  • Maximum Gate Charge: 15.8nC @ 4.5V
  • Maximum Input Capacitance: 1070pF @ 4V
  • Package: SOT-23

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.2930 $51.2750
420+ $0.2404 $100.9680
645+ $0.2329 $150.2205
890+ $0.2254 $200.6060
1,150+ $0.2179 $250.5850
1,540+ $0.1954 $300.9160
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Availability: 9,495 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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