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Same model may have multiple batches, images only for reference.
SI2392DS-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI2392DS-T1-GE3

Part No SI2392DS-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 3.1A SOT-23
Datasheet
SI2392DS-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 10.4nC @ 10V
Max Input Capacitance 196pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.25W (Ta), 2.5W (Tc)
Maximum Rds On at Id,Vgs 126 mOhm @ 2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1095762-SI2392DS-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI2392DS-T1-GE3 CAD Model

Description

The SI2392DS-T1-GE3 MOSFET from Vishay is a high-quality electronic component that is designed to provide excellent performance in a wide range of applications.

  • Channel Type: N-channel
  • Drain-Source Breakdown Voltage: 100V
  • Current Handling: Up to 3.1A
  • Package: SOT-23
  • Status: Obsolete (EOL)

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Pricing & Ordering

Quantity Unit Price Ext. Price
265+ $0.2190 $58.0350
645+ $0.1797 $115.9065
995+ $0.1742 $173.3290
1,375+ $0.1686 $231.8250
1,775+ $0.1629 $289.1475
2,375+ $0.1460 $346.7500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 265 pcs
Order Increment : 1 pcs
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