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Same model may have multiple batches, images only for reference.
SI3407DV-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI3407DV-T1-GE3

Part No SI3407DV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 8A 6-TSOP
Datasheet
SI3407DV-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 63nC @ 10V
Max Input Capacitance 1670pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2W (Ta), 4.2W (Tc)
Maximum Rds On at Id,Vgs 24 mOhm @ 7.5A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 1095817-SI3407DV-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI3407DV-T1-GE3 CAD Model

Description

The SI3407DV-T1-GE3 is an electronic component manufactured by Vishay.

  • Type: MOSFET
  • Polarity: P-Channel
  • Maximum Power Dissipation: 2W (Ta) and 4.2W (Tc)
  • Supply and Demand Status: Balanced
  • Package: 6-TSOP
  • Dimension: SOT-23-6 Thin, TSOT-23-6
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 8A (Tc)
  • Maximum Gate-Source Voltage: ±12V

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Pricing & Ordering

Quantity Unit Price Ext. Price
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360+ $0.2800 $100.8000
555+ $0.2713 $150.5715
765+ $0.2625 $200.8125
990+ $0.2538 $251.2620
1,320+ $0.2275 $300.3000
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Availability: 6,355 pieces
MOQ: 150 pcs
Order Increment : 1 pcs
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