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Same model may have multiple batches, images only for reference.
SI3433BDV-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI3433BDV-T1-E3

Part No SI3433BDV-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 4.3A 6-TSOP
Datasheet
SI3433BDV-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 850mV @ 250μA
Max Gate Charge 18nC @ 4.5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.1W (Ta)
Maximum Rds On at Id,Vgs 42 mOhm @ 5.6A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 105082-SI3433BDV-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI3433BDV-T1-E3 CAD Model

Description

The Vishay SI3433BDV-T1-E3 is a P-channel MOSFET with a maximum power dissipation of 1.1W (Ta).

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 4.3A (Ta)
  • Popularity: Medium
  • Supply and Demand Status: Balanced
  • Technology: MOSFET
  • Mounting Style: SMD (SMT)

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.3361 $58.8175
420+ $0.2760 $115.9200
650+ $0.2680 $174.2000
895+ $0.2587 $231.5365
1,155+ $0.2506 $289.4430
1,550+ $0.2241 $347.3550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,300 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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