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Same model may have multiple batches, images only for reference.
SI3443BDV-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI3443BDV-T1-GE3

Part No SI3443BDV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 3.6A 6-TSOP
Datasheet
SI3443BDV-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.4V @ 250μA
Max Gate Charge 9nC @ 4.5V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.1W (Ta)
Maximum Rds On at Id,Vgs 60 mOhm @ 4.7A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 064443-SI3443BDV-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI3443BDV-T1-GE3 CAD Model

Description

The SI3443BDV-T1-GE3 is a P-Channel MOSFET manufactured by Vishay.

  • Maximum Power Dissipation: 1.1W (Ta)
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Package: 6-TSOP
  • Drain-Source Breakdown Voltage: 20V
  • Maximum Rds On: 60 mOhm @ 4.7A, 4.5V
  • Maximum Gate-Source Voltage: ±12V
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
150+ $0.3908 $58.6200
365+ $0.3206 $117.0190
560+ $0.3107 $173.9920
770+ $0.3007 $231.5390
995+ $0.2906 $289.1470
1,330+ $0.2606 $346.5980
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,699 pieces
MOQ: 150 pcs
Order Increment : 1 pcs
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