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SI3456CDV-T1-GE3

Part No SI3456CDV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 7.7A 6TSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 460pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta), 3.3W (Tc)
Maximum Rds On at Id,Vgs 34 mOhm @ 6.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 064448-SI3456CDV-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI3456CDV-T1-GE3 CAD Model

Description

The SI3456CDV-T1-GE3 electronic component is manufactured by Vishay.

  • Status: obsolete (EOL)
  • Popularity: medium
  • Supply and Demand Status: sufficient
  • Maximum Power Dissipation: 2W (Ta), 3.3W (Tc)
  • Mounting: SMD (SMT)
  • Drain-Source Breakdown Voltage: 30V
  • Temperature Range: -55°C to 150°C (TJ)
  • Case/Package: 6-TSOP
  • Dimension: SOT-23-6 Thin, TSOT-23-6
  • Maximum Rds On at Id, Vgs: 34 mOhm @ 6.1A, 10V
  • Maximum Gate-Source Voltage: ±20V

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Pricing & Ordering

Quantity Unit Price Ext. Price
325+ $0.1802 $58.5650
785+ $0.1478 $116.0230
1,210+ $0.1432 $173.2720
1,670+ $0.1386 $231.4620
2,160+ $0.1340 $289.4400
2,885+ $0.1201 $346.4885
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 72,500 pieces
MOQ: 325 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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