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SI3456DDV-T1-GE3

Part No SI3456DDV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 6.3A 6-TSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 9nC @ 10V
Max Input Capacitance 325pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.7W (Ta), 2.7W (Tc)
Maximum Rds On at Id,Vgs 40 mOhm @ 5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 028430-SI3456DDV-T1-GE3
Family Name Si3456DDV
Introduction Date January 00, 1900
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian SI3456DDV-T1-GE3 CAD Model

Description

The Vishay SI3456DDV-T1-GE3 is an N-channel MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 6.3A (Tc) @ 25°C.

  • Maximum Rds On at Id,Vgs: 40 mOhm @ 5A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 9nC @ 10V
  • Popularity: high

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Pricing & Ordering

Quantity Unit Price Ext. Price
260+ $0.1935 $50.3100
630+ $0.1588 $100.0440
980+ $0.1538 $150.7240
1,345+ $0.1489 $200.2705
1,740+ $0.1439 $250.3860
2,330+ $0.1290 $300.5700
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 123,000 pieces
MOQ: 260 pcs
Order Increment : 1 pcs
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