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SI3457BDV-T1-E3

Part No SI3457BDV-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 3.7A 6-TSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 19nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.14W (Ta)
Maximum Rds On at Id,Vgs 54 mOhm @ 5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 094604-SI3457BDV-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI3457BDV-T1-E3 CAD Model

Description

The Vishay 094604-SI3457BDV-T1-E3 is a P-channel MOSFET that is commonly used in discrete semiconductor products.

  • Maximum Power Dissipation: 1.14W (Ta)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 3.7A (Ta) @ 25°C
  • Maximum Rds On at Id,Vgs: 54 mOhm @ 5A, 10V
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 19nC @ 10V
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Status: obsolete (EOL)
  • Popularity: high

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.4690 $51.5900
260+ $0.3849 $100.0740
405+ $0.3728 $150.9840
555+ $0.3608 $200.2440
720+ $0.3488 $251.1360
960+ $0.3127 $300.1920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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