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Same model may have multiple batches, images only for reference.
SI3458DV-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI3458DV-T1-E3

Part No SI3458DV-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 3.2A 6-TSOP
Datasheet
SI3458DV-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA (Min)
Max Gate Charge 16nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 100 mOhm @ 3.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 120523-SI3458DV-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI3458DV-T1-E3 CAD Model

Description

The SI3458DV-T1-E3 is an electronic component manufactured by Vishay.

  • Maximum Power Dissipation: 2W
  • Maximum Continuous Drain Current: 3.2A

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.6145 $58.3775
230+ $0.5036 $115.8280
355+ $0.4886 $173.4530
490+ $0.4724 $231.4760
635+ $0.4562 $289.6870
850+ $0.4100 $348.5000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,420 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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